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MG200Q2YS60A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG200Q2YS60A (1200V/200A 2in1)
High Power Switching Applications Motor Control Applications
* * * *
Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. Low thermal resistance VCE (sat) = 2.4 V (typ.)
Equivalent Circuit
1
5 6 7 FO E1/C2
4 1 2 3
OT
FO
E2 Signal terminal 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open
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MG200Q2YS60A
Package Dimensions: 2-123C1B
Unit: mm
10.5 0.8
122 1.0 110 0.3
R6
15.3
4-
JAPAN E2 C1
5.5
15.24
20.5 0.8 20.5 0.8
25.4 0.5
50 0.3
8-
0.64
4
-
6
16 13
36 0.8
59 0.5
4. 8. VD Open
2.54 7 5
3 1
8 6 4 2
10.5 0.8
3 - M6 20 0.8 26 0.8 26 0.8 36.7 0.8 2 - 3.0
1.0 0.5
1.0 0.3
2.54
C2E1
1.0 0.3
26
119 0.5
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
20 0.8
26
4. 8.
37.5
VD Open
Signal Terminal Layout
7 5
8 2.54 25.4 0.6 6
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
3 1
4 2.54 2
2.54
Weight: 375 g
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62 1.0
MG200Q2YS60A
Maximum Ratings (Ta = 25C)
Stage Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current Inverter Forward current 1 ms Collector power dissipation (Tc = 25C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque 1 ms DC Symbol VCES VGES IC ICP IF IFM PC VD VFO IFO Tj Tstg Tope Visol 3/4 Rating 1200 20 200 A 400 200 A 400 2000 20 20 20 150 -40~125 -20~100 2500 (AC 1 min) 3 (M5) W V V mA C C C V Nm Unit V V
Electrical Characteristics (Tj = 25C)
1. Inverter Stage
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Switching time Turn-off time Fall time Reverse recovery time Forward voltage Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) toff tf trr VF IF = 200 A VCC = 600 V, IC = 200 A VGE = 15 V, RG = 10 W (Note 1) Test Condition VGE = 20 V, VCE = 0 VGE = +10 V, VCE = 0 VCE = 1200 V, VGE = 0 VCE = 5 V, IC = 200 mA VGE = 15 V, IC = 200 A Tj = 25C Tj = 125C Min 3/4 3/4 3/4 6.0 3/4 3/4 3/4 0.10 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 7.0 2.4 3/4 15000 3/4 3/4 3/4 3/4 2.4 Max +3/-4 100 1.0 8.0 2.8 V 3.2 3/4 1.00 2.00 0.50 0.50 2.8 V ms pF Unit mA nA mA V
VCE = 10 V, VGE = 0, f = 1 MHz
Note 1: Switching time test circuit & timing chart
2. Control (Tc = 25C)
Characteristics Fault output current Over temperature Fault output delay time Symbol OC OT td (Fo) Test Condition VGE = 15 V 3/4 VCC = 600 V, VGE = 15 V Min 240 100 3/4 Typ. 3/4 3/4 3/4 Max 3/4 125 8 Unit A C ms
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MG200Q2YS60A
3. Module (Tc = 25C)
Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition Inverter IGBT stage Inverter FRD stage With silicon compound Min 3/4 3/4 3/4 Typ. 3/4 3/4 0.013 Max 0.062 0.136 3/4 C/W Unit C/W
Switching Time Test Circuit
RG -VGE
IF
VCC IC RG L
Timing Chart
90% 10%
VGE
90% Irr Irr IC trr 20% Irr 90%
10% td (on) td (off)
10%
tf
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MG200Q2YS60A
Remark

l Short circuit capability is 6 ms after fault output signal. Please keep following condition to use fault output signal. * VCC < 750 V = < * 14.8 V = VGE < 17.0 V = > 10 W * RG = * Tj < 125C =

l To use this product, VGE must be provided higher than 14.8 V. In case VGE is less than 14.8 V, fault signal FO may not be output even under error conditions.
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MG200Q2YS60A
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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